| PART |
Description |
Maker |
| MX29F400TM 29F4000 MX29F400TMC-90 MX29F400TTC-70 M |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29F400CBMI-70G MX29F400CBTI-70G |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY 256K X 16 FLASH 5V PROM, 70 ns, PDSO44
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Macronix International Co., Ltd.
|
| KM23V4000D |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM) 4分位512Kx8）的CMOS掩模ROM分位512Kx8）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| KM23V4000DETY KM23V4000DTY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY29F400ABT-50 HY29F400ABT-50I HY29F400ABT-55 HY29 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HT27C040 |
CMOS 512Kx8-Bit OTP EPROM
|
holtek
|
| KM6164002A |
256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX29F040TC-55 MX29F040TC-12 MX29F040QC-90 MX29F040 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29F4000 MX29F4000PC-12 MX29F4000PC-55 MX29F4000P |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
Macronix International
|
| N04M1618L1AT-85I N04M1618L1A N04M1618L1AB N04M1618 |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| HT23C040H 23C040H |
CMOS 512KX8-Bit High Speed Mask ROM
From old datasheet system
|
holtek
|
